Time-resolved photoluminescence studies of InxGa1-xAs1-yNy
Identifieur interne : 012474 ( Main/Repository ); précédent : 012473; suivant : 012475Time-resolved photoluminescence studies of InxGa1-xAs1-yNy
Auteurs : RBID : Pascal:00-0019876Descripteurs français
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- 7847, 7855C, 7866F, 7135, Etude expérimentale, Gallium arséniure, Indium arséniure, Nitrure, Photoluminescence, Dépôt chimique phase vapeur, Epitaxie, Exciton, Durée vie porteur charge, Indium composé, Gallium composé, Spectre résolution temporelle, Semiconducteur III-V, Couche épitaxique semiconductrice, Durée vie radiative.
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Abstract
Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in a InxGa1-xAs1-yNy (x∼0.03, y∼0.01) epilayer grown on GaAs by metal organic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements, performed for various excitation intensities and sample temperatures, indicate that the broad PL emission at low temperature is dominated by localized exciton recombination. Lifetimes in the range of 0.07-0.34 ns are measured; these photoluminescence lifetimes are significantly shorter than corresponding values obtained for GaAs. In particular, we observe an emission energy dependence of the decay lifetime at 10 K, whereby the lifetime decreases with increasing emission energy across the PL spectrum. This behavior is characteristic of a distribution of localized states, which arises from alloy fluctuations. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Time-resolved photoluminescence studies of In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub></title><author><name sortKey="Mair, R A" uniqKey="Mair R">R. A. Mair</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jones, E D" uniqKey="Jones E">E. D. Jones</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185-0603</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Allerman, A A" uniqKey="Allerman A">A. A. Allerman</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185-0603</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Kurtz, S R" uniqKey="Kurtz S">S. R. Kurtz</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185-0603</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0019876</idno><date when="2000-01-10">2000-01-10</date><idno type="stanalyst">PASCAL 00-0019876 AIP</idno><idno type="RBID">Pascal:00-0019876</idno><idno type="wicri:Area/Main/Corpus">013E93</idno><idno type="wicri:Area/Main/Repository">012474</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CVD</term><term>Carrier lifetime</term><term>Epitaxy</term><term>Excitons</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Indium compounds</term><term>MOCVD coatings</term><term>Nitrides</term><term>Photoluminescence</term><term>Radiative lifetimes</term><term>Semiconductor epitaxial layers</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7847</term><term>7855C</term><term>7866F</term><term>7135</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Indium arséniure</term><term>Nitrure</term><term>Photoluminescence</term><term>Dépôt chimique phase vapeur</term><term>Epitaxie</term><term>Exciton</term><term>Durée vie porteur charge</term><term>Indium composé</term><term>Gallium composé</term><term>Spectre résolution temporelle</term><term>Semiconducteur III-V</term><term>Couche épitaxique semiconductrice</term><term>Durée vie radiative</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in a In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub> (x∼0.03, y∼0.01) epilayer grown on GaAs by metal organic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements, performed for various excitation intensities and sample temperatures, indicate that the broad PL emission at low temperature is dominated by localized exciton recombination. Lifetimes in the range of 0.07-0.34 ns are measured; these photoluminescence lifetimes are significantly shorter than corresponding values obtained for GaAs. In particular, we observe an emission energy dependence of the decay lifetime at 10 K, whereby the lifetime decreases with increasing emission energy across the PL spectrum. 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R.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185-0603</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>188-190</s1></fA20><fA21><s1>2000-01-10</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0019876</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in a In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub> (x∼0.03, y∼0.01) epilayer grown on GaAs by metal organic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements, performed for various excitation intensities and sample temperatures, indicate that the broad PL emission at low temperature is dominated by localized exciton recombination. Lifetimes in the range of 0.07-0.34 ns are measured; these photoluminescence lifetimes are significantly shorter than corresponding values obtained for GaAs. In particular, we observe an emission energy dependence of the decay lifetime at 10 K, whereby the lifetime decreases with increasing emission energy across the PL spectrum. 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